New insights into the thermally activated defects in n-type float-zone silicon-Reference-Cited by-同舟云学术

New insights into the thermally activated defects in n-type float-zone silicon

Published:2019 Issue: Volume: Page:
ISSN:0094-243X
Container-title:15th International Conference on Concentrator Photovoltaic Systems (CPV-15)
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Author:

Zhu Yan,Rougieux Fiacre,Grant Nicholas,Mullins Jack,De Guzman Joyce Ann,Murphy John D.,Markevich Vladimir P.,Coletti Gianluca,Peaker Anthony R.,Hameiri Ziv

Publisher

AIP Publishing

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5123901

Reference22 articles.

1. 19.8% efficient “honeycomb” textured multicrystalline and 24.4% monocrystalline silicon solar cells

2. n-Type Si solar cells with passivating electron contact: Identifying sources for efficiency limitations by wafer thickness and resistivity variation

3. Evaluating root cause: The distinct roles of hydrogen and firing in activating light- and elevated temperature-induced degradation

4. Activation Kinetics of the Boron–oxygen Defect in Compensated n- and p-type Silicon Studied by High-Injection Micro-Photoluminescence

5. Record low surface recombination velocities on 1 Ω cm p‐silicon using remote plasma silicon nitride passivation

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1. Comparison of the Properties of Defect States in Nitrogen‐Containing n‐ and p‐Type Float‐Zone Silicon: A Combined Deep‐Level Transient Spectroscopy and Minority‐Carrier Transient Spectroscopy Study;physica status solidi (a);2023-01-04

2. Deep Learning Extraction of the Temperature-Dependent Parameters of Bulk Defects;ACS Applied Materials & Interfaces;2022-10-19

3. Bulk Defects and Hydrogenation Kinetics in Crystalline Silicon Solar Cells With Fired Passivating Contacts;IEEE Journal of Photovoltaics;2022-05

4. On the nature of thermally activated defects in n-type FZ silicon grown in nitrogen atmosphere;AIP Advances;2022-03-01

5. Formation and elimination of electrically active thermally- induced defects in float-zone-grown silicon crystals;SiliconPV 2021, The 11th International Conference on Crystalline Silicon Photovoltaics;2022