Oxygen Precipitation Properties of Nitrogen‐Doped Czochralski Silicon Single Crystals with Low Oxygen Concentration-Reference-Cited by-同舟云学术

Oxygen Precipitation Properties of Nitrogen‐Doped Czochralski Silicon Single Crystals with Low Oxygen Concentration

Published:2019-07-19 Issue:17 Volume:216 Page:1900272
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Kajiwara Kaoru¹^ORCID,Harada Kazuhiro²,Torigoe Kazuhisa³,Hourai Masataka⁴

Affiliation:

1. Technology DivisionCrystal Engineering DepartmentSUMCO Corporation 2201 Oaza-Kamioda, Kouhoku-cho, Kishima-gun Saga 849-0597 Japan

2. Technology DivisionCrystal Engineering DepartmentSUMCO Corporation 1-52 Kubara, Yamashiro-cho, Imari-shi Saga 849-4256 Japan

3. Technology DivisionAdvanced Evaluation and Technology DepartmentSUMCO Corporation 1-52 Kubara, Yamashiro-cho, Imari-shi Saga 849-4256 Japan

4. Technology DivisionSUMCO Corporation 1-52 Kubara, Yamashiro-cho, Imari-shi Saga 849-4256 Japan

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900272

Reference27 articles.

1. Review and Comments for the Development of Point Defect‐Controlled CZ‐Si Crystals and Their Application to Future Power Devices (Phys. Status Solidi A 10∕2019)

2. The effect of carbon on thermal donor formation in heat treated pulled silicon crystals

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