Review and Comments for the Development of Point Defect‐Controlled CZ‐Si Crystals and Their Application to Future Power Devices (Phys. Status Solidi A 10∕2019)-Reference-Cited by-同舟云学术

Review and Comments for the Development of Point Defect‐Controlled CZ‐Si Crystals and Their Application to Future Power Devices (Phys. Status Solidi A 10∕2019)

Published:2019-05 Issue:10 Volume:216 Page:1970035
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Hourai Masataka¹^ORCID,Nagashima Toru²,Nishikawa Hideshi²,Sugimura Wataru³,Ono Toshiaki³,Umeno Shigeru³

Affiliation:

1. Technology Division, SUMCO Corporation1‐52 Kubara, Yamashiro‐cho, ImariSaga 849‐4256Japan

2. Customer Product Engineering Department, Technology Division, SUMCO Corporation2201 Oaza Kamioda, Kohoku‐machi, Kishima‐gunSaga 849‐0597Japan

3. Advanced Evaluation and Technology Department, Technology Division, SUMCO Corporation1‐52 Kubara, Yamashiro‐cho, ImariSaga 849‐4256Japan

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201970035

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gray-box model-based predictive control of Czochralski process;Journal of Crystal Growth;2021-11

2. Gray-box modeling of 300 mm diameter Czochralski single-crystal Si production process;Journal of Crystal Growth;2021-01

3. Oxygen Precipitation Properties of Nitrogen‐Doped Czochralski Silicon Single Crystals with Low Oxygen Concentration;physica status solidi (a);2019-07-19