Gray-box modeling of 300 mm diameter Czochralski single-crystal Si production process

Author:

Kato Shota,Kim SanghongORCID,Kano ManabuORCID,Fujiwara Toshiyuki,Mizuta Masahiko

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. Silicon shipment statistics — semi.org, http://www1.semi.org/en/MarketInfo/SiliconShipmentStatistics, accessed on 04/27/2020.

2. Modeling and Simulation of Czochralski Bulk Crystal Growth Process: Investigation of Transport Effects in Melt and Gas Phases;Wu,2009

3. Dynamics and control of the Czochralski process. I. Modelling and dynamic characterization;Gevelber;J. Cryst. Growth,1987

4. Nonlinear model-based control of the Czochralski process I: Motivation, modeling and feedback controller design;Winkler;J. Cryst. Growth,2010

5. Nonlinear model-based control of the Czochralski process II: Reconstruction of crystal radius and growth rate from the weighing signal;Winkler;J. Cryst. Growth,2010

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