Gray-box model-based predictive control of Czochralski process

Author:

Kato Shota,Kim Sanghong,Mizuta Masahiko,Oshima Masanori,Kano Manabu

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

1. Silicon Shipment Statistics — SEMI, https://www.semi.org/en/products-services/market-data/materials/si-shipment-statistics (accessed on 01/21/2021).

2. Modeling and simulation of Czochralski bulk crystal growth process: investigation of transport effects in melt and gas phases;Wu,2009

3. A first-principle model of 300 mm Czochralski single-crystal Si production process for prediction crystal radius and crystal growth rate;Zheng;J. Cryst. Growth,2018

4. Review and comments for the development of point defect-controlled CZ-Si crystals and their application to future power devices;Hourai;Phys. Status Solidi A,2019

5. Model-predictive control of the Czochralski crystallization process. Part I. Conduction-dominated melt;Irizarry-Rivera;J. Cryst. Growth,1997

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