Density functional theory study on concentration of intrinsic point defects in growing N-doped Czochralski Si crystal-Reference-Cited by-同舟云学术

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Density functional theory study on concentration of intrinsic point defects in growing N-doped Czochralski Si crystal

Published:2021-10 Issue: Volume:571 Page:126249
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Taniguchi Motoharu,Sueoka Koji,Hourai Masataka

Funder

Japan Society for the Promotion of Science

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference26 articles.

1. Influence of oxygen and nitrogen on point defect aggregation in silicon single crystals

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of Nitrogen Doping on Pulling Rate Range of Defect-Free Crystal in CZ Silicon;Coatings;2023-09-18

2. First principles analysis on void-reduction mechanism and impact of oxygen in nitrogen-doped CZ-Si crystal;Journal of Crystal Growth;2023-05

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