A study of electrically active traps in AlGaN/GaN high electron mobility transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4826922
Reference13 articles.
1. Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope
2. Study of leakage defects on GaN films by conductive atomic force microscopy
3. Analysis of leakage current mechanisms in Schottky contacts to GaN and Al0.25Ga0.75N∕GaN grown by molecular-beam epitaxy
4. Power Performance of AlGaN–GaN HEMTs Grown on SiC by Plasma-Assisted MBE
5. AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit
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1. Understanding the trap-induced frequency dispersion in the C–V curve of AlGaN/GaN hetero-structure;Semiconductor Science and Technology;2024-04-18
2. Analysis of AlGaN/GaN Interface Traps in the Enhancement-mode p-GaN HEMT;2023 International Conference on Device Intelligence, Computing and Communication Technologies, (DICCT);2023-03-17
3. AlGaN/GaN HEMT device physics and electrothermal modeling;Thermal Management of Gallium Nitride Electronics;2022
4. Investigation of Traps in AlGaN/GaN Heterostructures by Ultrasonic Vibrations;Ukrainian Journal of Physics;2021-12-20
5. Bias Dependence Model of Peak Frequency of GaN Trap in GaN HEMTs Using Low-Frequency Y₂₂ Parameters;IEEE Transactions on Electron Devices;2021-11
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