Bias Dependence Model of Peak Frequency of GaN Trap in GaN HEMTs Using Low-Frequency Y₂₂ Parameters-Reference-Cited by-同舟云学术

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Bias Dependence Model of Peak Frequency of GaN Trap in GaN HEMTs Using Low-Frequency Y₂₂ Parameters

Published:2021-11 Issue:11 Volume:68 Page:5565-5571
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Oishi Toshiyuki^ORCID,Otsuka Tomohiro,Tabuchi Masaya,Yamaguchi Yutaro,Shinjo Shintaro^ORCID,Yamanaka Koji

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9583611/09555386.pdf?arnumber=9555386

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analyzing Measured and De-Embedded S-Parameters of a Hybrid Network Unit for RF Characteristics of AlGaN HEMTs;2024 International Conference on Advancements in Power, Communication and Intelligent Systems (APCI);2024-06-21

2. Aging Reliability Compact Modeling of Trap Effects in Power GaN HEMTs;IEEE Transactions on Device and Materials Reliability;2024-06

3. Drain bias dependence of Y ₂₂ and Y ₂₁ signals at low frequency for on-state conditions in AlGaN/GaN high electron mobility transistors;Japanese Journal of Applied Physics;2024-01-01

4. A Fast Adaptive LPCA Method for Fetal ECG Extraction Based on Multichannel Signals;IEEE Transactions on Instrumentation and Measurement;2024

5. A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage;IEEE Transactions on Instrumentation and Measurement;2024

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