Author:
Chatterjee Bikramjit,Shoemaker Daniel,Wong Hiu-Yung,Choi Sukwon
Cited by
2 articles.
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1. Study on the Influence of Defects in Recessed-Gate GaN MIS-HEMTs by TCAD Simulation;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
2. TCAD Simulation Models, Parameters, and Methodologies for β-Ga2O3 Power Devices;ECS Journal of Solid State Science and Technology;2023-05-01