Study on the Influence of Defects in Recessed-Gate GaN MIS-HEMTs by TCAD Simulation
Author:
Affiliation:
1. School of Materials and Chemistry, University of Shanghai for Science and Technology,Shanghai,China,200093
Funder
National Natural Science Foundation of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10399638/10399484/10399663.pdf?arnumber=10399663
Reference12 articles.
1. Effect of Thermal Cleaning Prior to p-GaN Gate Regrowth for Normally Off High-Electron-Mobility Transistors
2. Effects of TMAH Treatment on Device Performance of Normally Off $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GaN}$ MOSFET
3. Self-terminated Gate Recessing with a Low Density of Interface States and High Uniformity for Enhancement-mode GaN HEMTs
4. Analysis of the Reliability of AlGaN/GaN HEMTs Submitted to On-State Stress Based on Electroluminescence Investigation
5. AlGaN/GaN HEMT device physics and electrothermal modeling
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