Effects of TMAH Treatment on Device Performance of Normally Off $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GaN}$ MOSFET-Reference-Cited by-同舟云学术

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Effects of TMAH Treatment on Device Performance of Normally Off $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GaN}$ MOSFET

Published:2011-10 Issue:10 Volume:32 Page:1376-1378
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kim Ki-Won,Jung Sung-Dal,Kim Dong-Seok,Kang Hee-Sung,Im Ki-Sik,Oh Jae-Joon,Ha Jong-Bong,Shin Jai-Kwang,Lee Jung-Hee

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6028517/06012506.pdf?arnumber=6012506

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