Comparison of performance in GaN-HEMTs on thin SiC substrate and sapphire substrates-Reference-Cited by-同舟云学术

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Comparison of performance in GaN-HEMTs on thin SiC substrate and sapphire substrates

Published:2024-08 Issue: Volume:90 Page:1117-1124
ISSN:0577-9073
Container-title:Chinese Journal of Physics
language:en
Short-container-title:Chinese Journal of Physics

Author:

Chuang Tsung Po,Tumilty Niall^ORCID,Yu Chia Hao,Horng Ray Hua^ORCID

Funder

Taiwan Ministry of Science and Technology

Publisher

Elsevier BV

Reference15 articles.

1. Prospects for device implementation of wide band gap semiconductors;Edgar;J. Mater. Res.,1992

2. Challenges and opportunities for high-power and high-frequency AlGaN/GaN high-electron-mobility transistor (HEMT) applications: a review;Haziq;Micromachines (Basel),2023

3. Physics and technology of gallium nitride materials for power electronics;Roccaforte;Riv. Nuovo. Cimento.,2018

4. Self-heating in high-power AlGaN-GaN HFETs;Gaska;IEEE Electron. Dev. L.,1998

5. High-resolution thermoreflectance imaging investigation of self-heating in AlGaN/GaN HEMTs on Si, SiC, and diamond substrates;Helou;IEEE T. Electron. Dev.,2020

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