Analysis of AlGaN/GaN Interface Traps in the Enhancement-mode p-GaN HEMT
Author:
Affiliation:
1. Kurukshetra University,Department of Electronics Science,Kurukshetra,India,136119
2. Graphic Era University,Electronics and Communication Department,Dehradun,Uttrakhand,India,248001
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10110034/10110036/10110108.pdf?arnumber=10110108
Reference28 articles.
1. A study of electrically active traps in AlGaN/GaN high electron mobility transistor
2. Trap-assisted degradation mechanisms in E-mode p-GaN power HEMT: A review
3. Combined Effects of Proton Irradiation and Forward Gate-Bias Stress on the Interface Traps in AlGaN/GaN Heterostructure
4. Investigations of temperature-dependent interface traps in AlGaN/GaN HEMT on CVD-diamond
5. 200 mm GaN-on-Si epitaxy and e-mode device technology;marcon;IEDM Tech Dig,2015
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