Analysis of leakage current mechanisms in Schottky contacts to GaN and Al0.25Ga0.75N∕GaN grown by molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2159547
Reference22 articles.
1. Power Performance of AlGaN–GaN HEMTs Grown on SiC by Plasma-Assisted MBE
2. Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates
3. Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes
4. Screw dislocations in GaN: The Ga-filled core model
5. Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope
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