Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1490147
Reference22 articles.
1. Dislocation scattering in a two-dimensional electron gas
2. High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy
3. Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes
4. Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors
5. Electrical characterization of GaN p-n junctions with and without threading dislocations
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