Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope-Reference-Cited by-同舟云学术

Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope

Published:2002 Issue:12 Volume:91 Page:9821
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Miller E. J.,Schaadt D. M.,Yu E. T.,Poblenz C.,Elsass C.,Speck J. S.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference17 articles.

1. AlGaN/GaN high electron mobility field effect transistors with low 1/f noise

2. Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors

3. High dislocation densities in high efficiency GaN‐based light‐emitting diodes

4. Electrical characterization of GaN p-n junctions with and without threading dislocations

5. Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes

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