High‐sensitivity depth profiling of arsenic and phosphorus in silicon by means of SIMS
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.89181
Reference19 articles.
1. Profiles of boron implantations in silicon measured by secondary ion mass spectrometry
2. Implications in the use of secondary ion mass spectrometry to investigate impurity concentration profiles in solids
3. Concentration profiles of implanted boron ions in silicon from measurements with the ion microprobe
4. In-depth profiles of phosphorus ion-implanted silicon by Auger spectroscopy and secondary ion emission
5. Effect of residual oxygen on the formation of molecular ions in secondary ion mass spectrometry
Cited by 60 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Artifact-free secondary ion mass spectrometry profiling of a full vertical cavity surface emitting laser structure;Measurement;2024-02
2. Secondary ion mass spectrometry quantification of boron distribution in an array of silicon nanowires;Measurement;2023-04
3. 3D Depth Profile Reconstruction of Segregated Impurities using Secondary Ion Mass Spectrometry;Journal of Visualized Experiments;2020-04-29
4. Secondary ion mass spectrometry investigation of carbon grain formation in boron nitride epitaxial layers with atomic depth resolution;Journal of Analytical Atomic Spectrometry;2019
5. A-Crater-within-a-Crater Approach for Secondary Ion Mass Spectrometry Evaluation of the Quality of Interfaces of Multilayer Devices;ACS Applied Materials & Interfaces;2018-10-04
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3