Profiles of boron implantations in silicon measured by secondary ion mass spectrometry-Reference-Cited by-同舟云学术

Profiles of boron implantations in silicon measured by secondary ion mass spectrometry

Published:1973-01 Issue:1-2 Volume:17 Page:83-90
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Hofker W. K.,Werner H. W.,Oosthoek D. P.,de Grefte H. A. M.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337577308232601

Reference21 articles.

1. Seidel, T. E. 1971. Proc. II International Conference on Ion Implantation in Semiconductors. 1971, Garmisch Partenkirchen. Edited by: Ruge, I. and Graul, J. Springer Verlag.

2. Dearnaley, G., Wilkins, M. A. and Goode, P. D. 1971. PRoc. II International Conference on Ion Implantation in Semiconductors. 1971, Garmisch Partenkirchen. Edited by: Ruge, I. and Graul, J. Springer Verlag.

3. Boron Content and Profiles in Large Laboratory Diamonds

4. Werner, H. W. 1969.Developments in Applied Spectroscopy, Vol. 7A, 239Plenum Press.

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Channeling implantation of B and P in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-04

2. Surface and depth analysis based on sputtering;Topics in Applied Physics;1991

3. Diagnostic Techniques;Microelectronic Materials and Processes;1989

4. Beam-induced broadening effects in sputter depth profiling;Vacuum;1984-01

5. Analytical assistance in semiconductor and electronic material technology;Fresenius' Zeitschrift für analytische Chemie;1983-01