Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4891258
Reference30 articles.
1. High-power AlGaN/GaN HEMTs for Ka-band applications
2. Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN∕GaN heterostructures
3. Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)
4. Nonlinear macroscopic polarization in III-V nitride alloys
5. Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors
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