Influence of post fabrication annealing on device performance of InAlN/GaN high electron mobility transistors-Reference-Cited by-同舟云学术

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Influence of post fabrication annealing on device performance of InAlN/GaN high electron mobility transistors

Published:2024-04 Issue: Volume:187 Page:111870
ISSN:0022-3697
Container-title:Journal of Physics and Chemistry of Solids
language:en
Short-container-title:Journal of Physics and Chemistry of Solids

Author:

Luo Xin^ORCID,Cui Peng,Linewih Handoko^ORCID,Cheong Kuan Yew,Xu Mingsheng,Chen Siheng,Wang Liu,Sun Jiuji^ORCID,Dai Jiacheng,Xu Xiangang,Han Jisheng

Publisher

Elsevier BV

Reference30 articles.

1. High voltage and low leakage GaN-on-SiC MISHEMTs on a “buffer-free” heterostructure;Hult;IEEE Electron. Device Lett.,2022

2. Normally-off GaN-on-Si MISFET using PECVD SiON gate dielectric;Kim;IEEE Electron. Device Lett.,2017

3. GaN-based RF power devices and amplifiers;Mishra;Proc. IEEE,2008

4. 1.4-kV breakdown voltage for AlGaN/GaN high-electron-mobility transistors on silicon substrate;Selvaraj;IEEE Electron. Device Lett.,2012

5. Gallium nitride power devices: a state of the art review;Udabe;IEEE Access,2023

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recent progress of indium-bearing group-III nitrides and devices: a review;Optical and Quantum Electronics;2024-09-12

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