Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric
Author:
Funder
NRF of Korea
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/7990274/07959555.pdf?arnumber=7959555
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