Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN∕GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2798500
Reference8 articles.
1. High-power AlGaN/GaN HEMTs for Ka-band applications
2. Transient characteristics of gan-based heterostructure field-effect transistors
3. Mobility of electrons in bulk GaN andAlxGa1−xN/GaNheterostructures
4. Lateral variations in threshold voltage of an AlxGa1−xN/GaN heterostructure field-effect transistor measured by scanning capacitance spectroscopy
5. Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors
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