Lateral variations in threshold voltage of an AlxGa1−xN/GaN heterostructure field-effect transistor measured by scanning capacitance spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1335840
Reference17 articles.
1. Microwave performance of AlGaN/GaN inverted MODFET's
2. GaN based heterostructure for high power devices
3. High-power 10-GHz operation of AlGaN HFET's on insulating SiC
4. The role of dislocation scattering in n-type GaN films
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