Study of electrical transport properties in split-gate AlGaN/GaN heterostructure field-effect transistors-Reference-Cited by-同舟云学术

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Study of electrical transport properties in split-gate AlGaN/GaN heterostructure field-effect transistors

Published:2024-02 Issue: Volume:212 Page:108833
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Zhou Heng,Lv Yuanjie,Liu Chao,Yang Ming,Lin Zhaojun,Liu Yang,Wang Mingyan

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. GaN HEMTs on Si with regrown contacts and Cutoff/maximum oscillation frequencies of 250/204 GHz;Li;IEEE Electron Dev Lett,2020

2. 360 GHz fMAX graded-channel AlGaN/GaN HEMTs for mmW low-noise applications;Moon;IEEE Electron Dev Lett,2020

3. 7.05 W/mm power density millimeter-wave GaN MIS-HEMT with plasma enhanced atomic layer deposition SiN dielectric layer;Zhang;IEEE Electron Dev Lett,2021

4. Characterization of 880 V normally off GaN MOSHEMT on silicon substrate fabricated with a plasma-free, self-terminated gate recess process;Tao;IEEE Trans Electron Dev,2018

5. A wideband, 25/40dBm high I/O power GaN HEMT ultra-low noise amplifier using even-odd mode techniques;Gupta;Microelectron J,2022

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