A wideband, 25/40dBm high I/O power GaN HEMT ultra-low noise amplifier using even-odd mode techniques-Reference-Cited by-同舟云学术

A wideband, 25/40dBm high I/O power GaN HEMT ultra-low noise amplifier using even-odd mode techniques

Published:2022-10 Issue: Volume:128 Page:105551
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Gupta Manishankar Prasad,Gorre Pradeep,Kumar Sandeep^ORCID,Nulu Venugopal

Funder

Science and Engineering Research Board

Department of Science and Technology, Ministry of Science and Technology, India

Publisher

Elsevier BV

Subject

General Engineering

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