Electron capture and emission properties of interface states in thermally oxidized and NO-annealed SiO2/4H-SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2837028
Reference19 articles.
1. Significantly improved performance of MOSFETs on silicon carbide using the 15R-SiC polytype
2. Interface Passivation for Silicon Dioxide Layers on Silicon Carbide
3. Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide
4. Characterization and modeling of the nitrogen passivation of interface traps in SiO2/4H–SiC
5. A cause for highly improved channel mobility of 4H-SiC metal–oxide–semiconductor field-effect transistors on the (112̄0) face
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