Analysis and Modeling of V<sub>th</sub> Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature-Reference-Cited by-同舟云学术

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Analysis and Modeling of V_th Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature

Published:2022-03 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Masin F.¹,De Santi C.¹,Stockman A.²,Lettens J.²,Geenen F.²,Meneghesso G.¹,Zanoni E.¹,Moens P.²,Meneghini M.¹

Affiliation:

1. University of Padova,Department of Information Engineering,Padova,Italy,35131

2. Onsemi,Oudenaarde,Belgium,B-9700

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764558.pdf?arnumber=9764558

Reference18 articles.

1. Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies

2. Interfaces between 4H-SiC and SiO2: Microstructure, nanochemistry, and near-interface traps

3. Differential Variable Base Charge Pumping ($\Delta-\text{CP}$) for SiO2/SiC Interface Characterization

4. Si/SiO₂ and SiC/SiO₂ Interfaces for MOSFETs – Challenges and Advances

5. Shallow Traps at P-Doped SiO₂/4H-SiC(0001) Interface

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Trapping/Detrapping Kinetic Modeling Under Positive/Negative Gate Stress Including Inhibition Dynamics in 4H-SiC MOS Capacitors;IEEE Transactions on Electron Devices;2024-01

2. Cryogenic Ultra-Fast Bias Temperature Instability Trap Profiling of SiC MOSFETs;2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2022-05-22

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