Cryogenic Ultra-Fast Bias Temperature Instability Trap Profiling of SiC MOSFETs-Reference-Cited by-同舟云学术

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Cryogenic Ultra-Fast Bias Temperature Instability Trap Profiling of SiC MOSFETs

Published:2022-05-22 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Geenen Filip¹,Masin Fabrizio²,Stockman Arno³,Santi Carlo De²,Lettens Jan³,Waldhoer Dominic⁴,Meneghini Matteo²,Grasser Tibor⁴,Moens Peter³

Affiliation:

1. Reliability & Quality assurance,onsemi,Oudenaarde,Belgium

2. Università di Padova,Dipartimento di Ingegneria dell'Informazione,Padova,Italy

3. onsemi,Corporate R&D,Oudenaarde,Belgium

4. Technischen Universität Wien,Institute of Microelectronics,Vienna,Austria

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9813543/9813532/09813614.pdf?arnumber=9813614

Reference18 articles.

1. Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities

2. Toward Automated Defect Extraction From Bias Temperature Instability Measurements

3. Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies

4. Efficient Modeling of Charge Trapping at Cryogenic Temperatures—Part I: Theory

5. Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of Threshold Voltage Shift in SiC MOSFETs Under Nanosecond-Range Switching and Its Impact on High- Frequency Applications;IEEE Transactions on Electron Devices;2024-07

2. Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: Analysis Based on Charge Pumping Measurements;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

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