Characterization of bulk traps and interface states in AlGaN/GaN heterostructure under proton irradiation-Reference-Cited by-同舟云学术

Characterization of bulk traps and interface states in AlGaN/GaN heterostructure under proton irradiation

Published:2018-06-04 Issue:23 Volume:112 Page:233504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zheng Xue-Feng¹,Dong Shuai-Shuai¹,Ji Peng¹,Wang Chong¹,He Yun-Long¹,Lv Ling¹,Ma Xiao-Hua¹,Hao Yue¹

Affiliation:

1. Key Lab of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China

Funder

111 Project, China

National Key Research and Development Plan of China

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5024645

Reference24 articles.

1. Neutron irradiation effects on gallium nitride-based Schottky diodes

2. AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz $F_{ \rm MAX}$

3. Displacement Damage Effects in AlGaN/GaN High Electron Mobility Transistors

4. Process Dependence of Proton-Induced Degradation in GaN HEMTs

5. AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

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