Temperature Dependence of Total Ionizing Dose Effects of β-Ga2O3 Schottky Barrier Diodes

Abstract

This paper investigates the temperature-dependent effects of gamma-ray irradiation on β-Ga2O3 vertical Schottky barrier diodes (SBDs) under a 100 V reverse bias condition at a total dose of 1 Mrad(Si). As the irradiation dose increased, the radiation damage became more severe. The total ionizing dose (TID) degradation behavior and mechanisms were evaluated through DC, capacitance–voltage (C-V), and low-frequency noise (LFN) measurements by varying irradiation, and the test results indicated that TID effects introduced interface defects and altered the carrier concentration within the material. The impact of TID effects was more pronounced at lower temperatures compared to higher temperatures. Additionally, the annealing effect in the high-temperature experimental conditions ameliorated the growth of interface trap defects caused by irradiation. These results suggest that compared to low-temperature testing, the device exhibits higher TID tolerance after high-temperature exposure, providing valuable insights for in-depth radiation reliability studies on subsequent related devices.