Neutron irradiation effects on gallium nitride-based Schottky diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4826091
Reference42 articles.
1. /sup 60/Co gamma irradiation effects on n-GaN Schottky diodes
2. Influence of 60Co γ-rays on dc performance of AlGaN/GaN high electron mobility transistors
3. Role of radiation defects in photoconductivity transients and photoluminescence spectra of epitaxial GaN layers
4. 60Co gamma radiation effects on DC, RF, and pulsed I–V characteristics of AlGaN/GaN HEMTs
5. Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped Al/sub x/Ga/sub 1-x/N and thick GaN cap Layers
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1. Neutron Irradiation Induced Carrier Removal and Deep-Level Traps in N-Gan Schottky Barrier Diodes;2023 China Semiconductor Technology International Conference (CSTIC);2023-06-26
2. 60Co gamma irradiation effects on GaN quasi-vertical Schottky barrier diodes with passivation layer and their post-irradiation annealing behavior;Applied Physics Express;2023-04-01
3. Highly Sensitive InGaAs/InAlAs X-Ray Avalanche Photodiodes With Fast Time Response;IEEE Transactions on Nuclear Science;2023-01
4. Radiation‐Tolerant Electronic Devices Using Wide Bandgap Semiconductors;Advanced Materials Technologies;2022-09-30
5. Neutron irradiation effects on gallium nitride-based blue LEDs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2022-05
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