Intrinsic origin and composition dependence of deep‐level defects at the inverted GaAs/AlxGa1−xAs interface grown by molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359222
Reference40 articles.
1. Correlation between optical spectroscopy and capacitance‐voltage profile simulation applied to interface states in multilayer GaAs/AlGaAs heterostructures
2. Enhancement of nonradiative interface recombination in GaAs coupled quantum wells
3. Differentiation of the non radiative recombination properties of the two interfaces of MBE grown GaAs-GaAlAs quantum wells
4. Reduction in interfacial recombination velocity by superlattice buffer layers in GaAs/AlGaAs quantum well structures
5. Hydrogen passivation of interface defects in GaAs/AlAs short‐period superlattices
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1. Deep level traps and the temperature behavior of the photoluminescence in GaAs/AlGaAs multiple quantum wells grown on off-axis and on-axis substrates;Journal of Luminescence;2013-11
2. An effect of As flux on GaAs/AlAs quantum wells: A combined photoluminescence and reflection high-energy electron diffraction study;Applied Surface Science;2008-12
3. Deep levels in GaAs/Al0.78Ga0.22As heterostructures;Physica B: Condensed Matter;2007-12
4. Influence of interface interruption on spin relaxation in GaAs (110) quantum wells;Journal of Crystal Growth;2007-04
5. Analysis of Emission Rate Measurements in a Material Showing a Meyer-Neldel- Rule;MRS Proceedings;2003
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