Influence of interface interruption on spin relaxation in GaAs (110) quantum wells-Reference-Cited by-同舟云学术

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Influence of interface interruption on spin relaxation in GaAs (110) quantum wells

Published:2007-04 Issue: Volume:301-302 Page:93-96
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Liu L.S.,Wang W.X.,Li Z.H.,Liu B.L.,Zhao H.M.,Wang J.,Gao H.C.,Jiang Z.W.,Liu S.,Chen H.,Zhou J.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference24 articles.

1. Spintronics: recent progress and tomorrow's challenges

2. Spintronics: Fundamentals and applications

3. Spintronics: A Spin-Based Electronics Vision for the Future

4. Calculation of thegFactor of Metallic Sodium

5. Theory of the Effect of Spin-Orbit Coupling on Magnetic Resonance in Some Semiconductors

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3. Step graded buffer for (110) InSb quantum wells grown by molecular beam epitaxy;Journal of Crystal Growth;2014-10

4. Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wells;Applied Physics Letters;2014-02-17

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