Enhancement of nonradiative interface recombination in GaAs coupled quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345220
Reference26 articles.
1. Extremely low threshold (AlGa)As modified multiquantum well heterostructure lasers grown by molecular‐beam epitaxy
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3. Some characteristics of the GaAs/GaAlAs graded‐index separate‐confinement heterostructure quantum well laser structure
4. Excitonic and electron‐hole contributions to the spontaneous recombination rate of injected charge carriers in GaAs‐GaAlAs multiple quantum well lasers at room temperature
5. Excitonic and electron‐hole contributions to the spontaneous recombination rate of injected charge carriers in GaAs‐GaAlAs multiple quantum well lasers at room temperature
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1. Suppressing nonradiative recombination in crown-shaped quantum wells;Japanese Journal of Applied Physics;2018-02-06
2. Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN;Journal of Applied Physics;2012-02
3. Optimizing GaN/AlGaN multiple quantum well structures by time-resolved photoluminescence;SPIE Proceedings;2001-04-23
4. SURFACE AND INTERFACIAL RECOMBINATION IN SEMICONDUCTORS;Handbook of Surfaces and Interfaces of Materials;2001
5. Barrier-width dependence of quantum efficiencies of GaN/AlxGa1−xN multiple quantum wells;Applied Physics Letters;2000-08-21
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