Correlation between optical spectroscopy and capacitance‐voltage profile simulation applied to interface states in multilayer GaAs/AlGaAs heterostructures-Reference-Cited by-同舟云学术

Correlation between optical spectroscopy and capacitance‐voltage profile simulation applied to interface states in multilayer GaAs/AlGaAs heterostructures

Published:1993-05-15 Issue:10 Volume:73 Page:5032-5037
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Rimmer J. S.,Hamilton B.,Dawson P.,Missous M.,Peaker A. R.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.353773

Reference18 articles.

1. On the Measurement of Impurity Atom Distributions in Silicon by the Differential Capacitance Technique

2. On the theory of Debye averaging in the C-V profiling of semiconductors

3. Interface states in GaAs/AlxGa1−xAs heterostructures grown by organometallic vapor phase epitaxy

4. Observation of deep levels associated with the GaAs/AlxGa1−xAs interface grown by molecular beam epitaxy

5. Deep level characterization of AlGaAs and selectively doped N-AlGaAs/GaAs heterojunctions

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1. Dopant Migration-Induced Interface Dipole Effect in n-Doped GaAs/AlGaAs Terahertz Detectors;IEEE Electron Device Letters;2008-10

2. SURFACE AND INTERFACIAL RECOMBINATION IN SEMICONDUCTORS;Handbook of Surfaces and Interfaces of Materials;2001

3. Capacitance‐voltage profiling of quantum well structures;Journal of Applied Physics;1996-05-01

4. Intrinsic origin and composition dependence of deep‐level defects at the inverted GaAs/AlxGa1−xAs interface grown by molecular‐beam epitaxy;Journal of Applied Physics;1995-06

5. Studies of deep-level defects at III–V heterointerfaces;Materials Science and Engineering: B;1994-12