Interface states in GaAs/AlxGa1−xAs heterostructures grown by organometallic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93770
Reference11 articles.
1. Growth of High-Quality AlxGa1−xAs By OMVPE for laser devices
2. Organometallic‐sourced VPE AlGaAs/GaAs concentrator solar cells having conversion efficiencies of 19%
3. Al0.5Ga0.5As‐GaAs heterojunction phototransistors grown by metalorganic chemical vapor deposition
4. A search for interface states in an LPE GaAs/AlxGa1−xAs heterojunction
5. Observation of deep levels associated with the GaAs/AlxGa1−xAs interface grown by molecular beam epitaxy
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