Observation of deep levels associated with the GaAs/AlxGa1−xAs interface grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93164
Reference15 articles.
1. Very low current threshold GaAs‐AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy
2. Very low current threshold GaAs‐AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy
3. Influence of growth conditions on the threshold current density of double-heterostructure lasers prepared by molecular-beam epitaxy
4. The effect of substrate temperature on the current threshold of GaAs‐AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy
5. The influence of bulk nonradiative recombination in the wide band‐gap regions of molecular beam epitaxially grown GaAs‐AlxGa1−xAs DH lasers
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3. Hole and Interface Traps in Mg-doped Al0.1Ga0.9N/GaN Grown by Metalorganic Chemical Vapor Deposition;Japanese Journal of Applied Physics;2002-01-15
4. Control of surface states in GaSb/AlxGa1−xAsySb1−y/GaxIn1−xSb/AlxGa1−xAsySb1−y quantum well structures;Applied Physics Letters;1999-11
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