Electrical activity of deep levels in the presence of InAs/GaAs quantum dots
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference16 articles.
1. Thermal emission of electrons from selected s-shell configurations in InAs/GaAs quantum dots
2. Electron capture cross sections of InAs∕GaAs quantum dots
3. Electron traps in AlGaAs grown by molecular‐beam epitaxy
4. Electron traps in bulk and epitaxial GaAs crystals
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Metamorphic InAs/InGaAs Quantum Dot Structures: Photoelectric Properties and Deep Levels;Springer Proceedings in Physics;2020
2. Deep levels in metamorphic InAs/InGaAs quantum dot structures with different composition of the embedding layers;Semiconductor Science and Technology;2017-10-26
3. Deep levels in GaAs(001)/InAs/InGaAs/GaAs self-assembled quantum dot structures and their effect on quantum dot devices;Journal of Applied Physics;2010-04
4. Classification of Energy Levels in Quantum Dot Structures by Depleted Layer Spectroscopy;Journal of Electronic Materials;2010-03-04
5. Application of the photoreflectance technique to the characterization of quantum dot intermediate band materials for solar cells;Thin Solid Films;2008-08
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