Deep levels in GaAs(001)/InAs/InGaAs/GaAs self-assembled quantum dot structures and their effect on quantum dot devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3359704
Reference46 articles.
1. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
2. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
3. Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)
4. Punctuated island growth: An approach to examination and control of quantum dot density, size, and shape evolution
5. Tailoring detection bands of InAs quantum-dot infrared photodetectors using InxGa1−xAs strain-relieving quantum wells
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1. An explanation for the non-monotonic temperature dependence of the photoluminescence spectral features of self-organized InAs QDs;Journal of Luminescence;2023-01
2. Вплив дефектних станів інтерфейсу на фотоелектричні властивості гетероструктур InxGa1-xAs/GaAs з квантовими точками;Ukrainian Journal of Physics;2022-02-08
3. Detection of optical emissions from deep localized states in a self-assembled InAs/GaAs QD structure;Applied Surface Science Advances;2022-02
4. Quantum Sensing for Energy Applications: Review and Perspective;Advanced Quantum Technologies;2021-06-15
5. InAs/InGaAs quantum dots confined by InAlAs barriers for enhanced room temperature light emission: Photoelectric properties and deep levels;Microelectronic Engineering;2021-02
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