Tailoring detection bands of InAs quantum-dot infrared photodetectors using InxGa1−xAs strain-relieving quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1417513
Reference20 articles.
1. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
2. Characteristics of InGaAs quantum dot infrared photodetectors
3. Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors
4. Self-assembled InAs-GaAs quantum-dot intersubband detectors
5. Semiconductor quantum-dot nanostructures: Their application in a new class of infrared photodetectors
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