Reduction in interfacial recombination velocity by superlattice buffer layers in GaAs/AlGaAs quantum well structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101097
Reference11 articles.
1. Impurity trapping, interface structure, and luminescence of GaAs quantum wells grown by molecular beam epitaxy
2. Effects of prelayers on minority‐carrier lifetime in GaAs/AlGaAs double heterostructures grown by molecular beam epitaxy
3. Improved recombination lifetime of photoexcited carriers in GaAs single quantum well heterostructures confined by GaAs/AlAs short‐period superlattices
4. MBE growth of extremely high-quality GaAs–AlGaAs GRIN-SCH lasers with a superlattice buffer layer
5. Study on decrease in lasing threshold current of GaAs/AlGaAs single quantum‐well lasers through introduction of superlattice waveguide layers
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1. The detrimental effect of AlGaN barrier quality on carrier dynamics in AlGaN/GaN interface;Scientific Reports;2019-11-22
2. Degradation study in SCH-SQW GaAs/AlGaAs lasers;Materials Science and Engineering: B;2003-09
3. DLTS study of deep levels in GRIN–SCH–SQW GaAs/AlGaAs laser diode structures grown by MBE;Optical Materials;2001-06
4. SURFACE AND INTERFACIAL RECOMBINATION IN SEMICONDUCTORS;Handbook of Surfaces and Interfaces of Materials;2001
5. Self-organized GaAs quantum-wire lasers grown on (775)B-oriented GaAs substrates by molecular beam epitaxy;Applied Physics Letters;1999-02-08
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