Study on decrease in lasing threshold current of GaAs/AlGaAs single quantum‐well lasers through introduction of superlattice waveguide layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.340110
Reference5 articles.
1. Effects of prelayers on minority‐carrier lifetime in GaAs/AlGaAs double heterostructures grown by molecular beam epitaxy
2. Improved recombination lifetime of photoexcited carriers in GaAs single quantum well heterostructures confined by GaAs/AlAs short‐period superlattices
3. High‐purity AlGaAs grown by molecular beam epitaxy using a superlattice buffer layer
4. Radiative recombination coefficient of free carriers in GaAs‐AlGaAs quantum wells and its dependence on temperature
5. Recombination dynamics in GaAs/Al<inf>x</inf>Ga<inf>1- x</inf>As quantum well structures
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1. SURFACE AND INTERFACIAL RECOMBINATION IN SEMICONDUCTORS;Handbook of Surfaces and Interfaces of Materials;2001
2. Characteristics of multistack multiquantum barrier and its application to graded-index separate confinement heterostructure lasers;IEEE Journal of Quantum Electronics;1996-03
3. Effect of superlattice buffer on improved emission efficiency of quantum wells for MgZnSSe-based blue/green lasers;Journal of Crystal Growth;1996-02
4. MOCVD growth and ultrafast photoluminescence in GaAs and InAs freestanding quantum whiskers—a review;Microwave and Optical Technology Letters;1994-02-20
5. Gas source molecular beam epitaxial growth and characterization of 600–660 nm GaInP/AlInP double-heterostructure lasers;Thin Solid Films;1993-08
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