Radiative recombination coefficient of free carriers in GaAs‐AlGaAs quantum wells and its dependence on temperature
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97844
Reference9 articles.
1. Temperature dependence of interface recombination and radiative recombination in (Al, Ga)As heterostructures
2. Recombination Enhancement due to Carrier Localization in Quantum Well Structures
3. Recombination lifetime of carriers in GaAs‐GaAlAs quantum wells near room temperature
4. Room‐temperature photoluminescence times in a GaAs/AlxGa1−xAs molecular beam epitaxy multiple quantum well structure
5. Recombination dynamics of carriers in GaAs-GaAlAs quantum well structures
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