Temperature dependence of interface recombination and radiative recombination in (Al, Ga)As heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94105
Reference13 articles.
1. Method for determining effective nonradiative lifetime and leakage losses in double‐heterostructure lasers
2. Interfacial recombination at (AlGa)As/GaAs heterojunction structures
3. Interfacial recombination in GaAlAs–GaAs heterostructures
4. Interfacial recombination velocity in GaAlAs/GaAs heterostructures
5. Minority carrier lifetime and luminescence in MOVPE-grown (Al,Ga)As epilayers and DH lasers
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