Affiliation:
1. King Abdullah University of Science and Technology
2. Sandia National Laboratories
3. Télécom ParisTech
4. University of California, Santa Barbara
Abstract
Abstract
This paper describes an analysis of integrated III-V/SiN lasers operating with quantum-dot and quantum-well active regions. We focus on the effects of 0- and 2-dimensional carrier densities of states on linewidth narrowing. The theoretical approach includes a) multimode laser interaction to treat mode competition and wave mixing, b) quantum-optical contributions from spontaneous emission and c) composite laser/free-space eigenmodes to describe outcoupling and coupling among components within an extended cavity. The approach is able to describe the progression to Hz-level lasing linewidth observed in III-V/SiN lasers with quantum-dot active regions. In addition, it predicts that the integration of III-V/SiN mitigates the high quantum-well linewidth enhancement factor, resulting in similar Hz-level linewidth performance. Tradeoffs are explored among linewidth, output power and injection current.
Publisher
Research Square Platform LLC
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