Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen-Reference-Cited by-同舟云学术

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Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen

Published:2013-11-11 Issue:20 Volume:103 Page:201607
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Long R. D.,Jackson C. M.,Yang J.,Hazeghi A.,Hitzman C.,Majety S.,Arehart A. R.,Nishi Y.,Ma T. P.,Ringel S. A.,McIntyre P. C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4827102

Reference22 articles.

1. Interface characterization of ALD deposited Al2O3 on GaN by CV method

2. Deposited Thin SiO[sub 2] for Gate Oxide on n-Type and p-Type GaN

3. Photoassisted high-frequency capacitance-voltage characterization of the Si3N4/GaN interface

4. Structural and electrical characteristics of atomic layer deposited high κ HfO2 on GaN

5. Atomic Layer Deposition: An Overview

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