Deposited Thin SiO[sub 2] for Gate Oxide on n-Type and p-Type GaN-Reference-Cited by-同舟云学术

Deposited Thin SiO[sub 2] for Gate Oxide on n-Type and p-Type GaN

Published:2010 Issue:11 Volume:157 Page:H1008
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Placidi M.,Constant A.,Fontserè A.,Pausas E.,Cortes I.,Cordier Y.,Mestres N.,Pérez R.,Zabala M.,Millán J.,Godignon P.,Pérez-Tomás A.

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference25 articles.

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2. Vertical GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistors on GaN Bulk Substrates

3. W. Huang, T. P. Chow, Y. Niiyama, T. Nomura, and S. Yoshida , inProc. 20th ISPSD, IEEE, p. 295 (2008).

4. Over 100A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage

5. MgO epitaxy on GaN (0002) surfaces by molecular beam epitaxy

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