Effects of the LPCVD Gate Dielectric Deposition Temperature on GaN MOSFET Channels and the Root Causes at the SiO2-GaN-Interface
Author:
Affiliation:
1. Department of Advanced Technologies and Micro Systems, Robert Bosch GmbH, Renningen, Germany
2. Institute for Electrical Drives, Power Electronics and Devices, University of Bremen, Bremen, Germany
Funder
Electronic Component Systems for European Leadership Joint Undertaking
European Union’s Horizon 2020 research and innovation program and Germany, France, Belgium, Austria, Sweden, Spain, Italy
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/16/10457976/10384349.pdf?arnumber=10384349
Reference21 articles.
1. GaN power device for automotive applications;Kachi
2. Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers
3. Mg implantation dose dependence of MOS channel characteristics in GaN double-implanted MOSFETs
4. Demonstration of 1200 V/1.4 mΩ cm2 vertical GaN planar MOSFET fabricated by an all ion implantation process
5. LPCVD against PECVD for micromechanical applications
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Experimental and Numerical Analysis of Off-State Bias Induced Instabilities in Vertical GaN-on-Si Trench MOSFETs;IEEE Transactions on Power Electronics;2024-11
2. SiO2‐GaN Interface Improvement by Wet Cleaning and In Situ Annealing for GaN MOS Transistors;physica status solidi (a);2024-07
3. Enhanced field-effect mobility (>250 cm2/V·s) in GaN MOSFETs with deposited gate oxides via mist CVD;Applied Physics Express;2024-06-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3