Mg implantation dose dependence of MOS channel characteristics in GaN double-implanted MOSFETs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://iopscience.iop.org/article/10.7567/1882-0786/ab0c2c/pdf
Reference29 articles.
1. Wide bandgap compound semiconductors for superior high-voltage unipolar power devices
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3. Planar Nearly Ideal Edge-Termination Technique for GaN Devices
4. Over 1.0 kV GaN p -n junction diodes on free-standing GaN substrates
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