Fracture dynamics in implanted silicon
Author:
Affiliation:
1. Univ. Grenoble Alpes, F-38000 Grenoble, France
2. CEA, INAC-SP2M, F-38000 Grenoble, France
3. CEA, LETI, MINATEC Campus, F-38054 Grenoble, France
4. SOITEC, Parc Technologique des Fontaines, 38190 Bernin, France
Funder
Investissement d'Avenir - EXACT program
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4930016
Reference33 articles.
1. Silicon on insulator material technology
2. Development of microcracks in hydrogen-implanted silicon substrates
3. Quantitative study of hydrogen-implantation-induced cavities in silicon by grazing incidence small angle x-ray scattering
4. A transmission electron microscopy quantitative study of the growth kinetics of H platelets in Si
5. Impact of the transient formation of molecular hydrogen on the microcrack nucleation and evolution in H-implanted Si (001)
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